Design of InGaAs pHEMT process based Low Noise & Medium power C band MMIC Amplifier

This paper presents the design and development of InGaAs pHEMT process based miniaturized 3 X 3 mm$^{2}$ 16 pin QFN package monolithic microwave integrated circuit with minimal noise and medium power amplifier for C band application. The simulated and experimental results are shown in this paper. This is a two stage self-biased common source single supply amplifier with 18 dB gain, 1.3 dB typical noise figure and 15 dBm of minimum OP1 dB. This design has integrated DC blocking capacitors at the input and output as part of matching circuit. 3 V single supply with a minimal power consumption of 177 mW. It is a plastic over mold QFN package.