Insulated Gate Bipolar Transistors with Deep Trench Technology for Low Loss Switching Application

A new insulated gate bipolar transistor (IGBT) with deep trench technology is proposed to improve on-state voltage drop (Von) and turn-off energy loss (Eoff) trade-off. The Deep trench gate IGBT (DT-IGBT) increases the charge carriers along the channel, leads to improve the collector current by 58% in comparison to conventional IGBT resulting reduction on Von. Apart from that, the collector section is segregated into two-parts, namely p-col and p
⁻
-col. The lower concentration of p
⁻
-col region creates a Schottky contact with metal and increases the recombination rate by reducing minority carrier lifetime. This effect allows the device to turn-off early and shows an advancement in turn-off time further reduces the Eoff by 33% in comparison to the conventional IGBT. The reduced doping in the collector region alter the electric field of the device and enhances the breakdown voltage (BV) by 7% with respect to the conventional one.