Scaled Reliability Prediction Model for Gallium Nitride (GaN) Monolithic Microwave Integrated Circuit

The design and manufacture of Gallium Nitride Monolithic Microwave Integrated Circuits (GaN MMICs) have matured in recent years, yet there is no existing reliability prediction modeling method, like the widely utilized one for Gallium Arsenide (GaAs) MMIC in MIL-HDBK-217. This paper develops and presents a new method for these devices by modifying key parameters in the existing GaAs MMIC standard model to incorporate the improved temperature properties of GaN, and typical activation energy, Ea obtained from accelerated life tests. The resulting model will be an invaluable tool for the reliability modeling of GaN MMICs for device suppliers and customers across all industries.