A W-Band Small-Signal Equivalent Circuit Modeling Based On 28nm CMOS Process

In this paper, an equivalent circuit model is proposed to describe the small-signal behavior of transistors operating in W band. This model carefully addresses non-quasi-static effect to improve accuracy in high frequency range. A RC network representing the substrate coupling effect is also included to better predict the RF behavior. For the validation of this model, a 16-finger n-type MOSFET is fabricated using 28-nm CMOS technology. By comparing the simulated results with measured data, a good agreement between them is achieved, and the maximum RMSE of S parameters is less than 0.025. Therefore, it is safe to conclude that the model could well characterize the small-signal behavior of transistors based on 28-nm process up to 110 GHz.