Monte Carlo Simulation of the Wet Etching Based On the Complicated Atomic Structure of Sapphire

This paper establishes a Monte Carlo simulation model based on the complicated atomic structure of sapphire, which can accurately simulate etch rates and etch structures of sapphire for the first time. This simulation model effectively divides the connection ways of Al-O atoms based on the different bond lengths between Al-O atoms, and further proposes the removal probability equation for surface atoms, thereby establishing the relationship between the removal probabilities of surface atoms and their neighbor atoms. Small errors between simulated and experimental results verifies the effectiveness of the established Monte Carlo simulation model of sapphire.