4H-SiC Beam Resonators with Tailored Local Zero TCF

For the first time, this paper unveils doubly-clamped beam resonators in monocrystalline 4H-silicon carbide (4H-SiC) with a tailorable local zero temperature coefficient of frequency (TCF). This innovation utilizes axial stress to counteract the temperature-driven softening of the 4H-SiC beam using the layered structure of 4H silicon carbide on insulator (SiCOI) substrate with a silicon handle layer. We demonstrate the ability to define the TCF turnover point anywhere in the range of −20 ~ 100℃ by tailoring the beam aspect ratio. We also delve into the stability attributes of the 4H-SiC microresonator, charting this terrain for the very first time.