Thermoelectrical Parameters of SiC PiN Diodes with New Die Attachment Ag Paste

This study comes with electrical and thermal measurements for new formula of die attachment of silicon carbide SiC PiN diodes. A pressure less sintering process have been developed [1] using an Ag paste with a small addition of resin for the chip of the SiC PiN diodes. Obtaining the characteristics of this type of PiN diodes is the objective of this paper and interpretation of result can conduct to the improvement of the technology for the SiC PiN diodes. SiC based devices have several advantages over traditional silicon and gallium arsenide [2]. One advantage is high operating temperature of SiC devices, another feature of SiC is high saturation velocity of electrons [3], which enables SiC-based devices to operate at high frequencies. An important characteristic of diodes for power and pulse application is the switching time [2]. All these properties of SiC PiN diodes offer a large scale of application.