Memcapacitor Crossbar Array with Charge Trapping Layer for Physical Unclonable Function in NAND Flash Architecture

In this work, we propose a memcapacitor crossbar array consisting of MOS capacitors with a charge trapping layer for physical unclonable function (PUF) in NAND flash architecture. The charging-based vector-matrix multiplication in the crossbar is demonstrated, and PUF operations using the erase state variations are verified with sensing circuits. Also, we investigate the utilization of the memcapacitor crossbar array within 3D NAND flash architecture in two operation modes, challenge-response pair mode and multi-chip mode, depending on how the three-dimensional structure is utilized.