TID effects on a 110 nm CMOS technology for fully depleted monolithic sensors

This paper investigates the effects of ionizing radiation on NMOS and PMOS transistors belonging to a 110 nm CMOS technology used in the design of fully depleted sensors for applications to particle and astro-particle physics and medical radio-diagnostic equipment. The work is focused in particular on electronic noise, also as a tool for studying the degradation process induced by total ionizing dose (TID) in the analog performance of the technology. The characterization results can be leveraged for the design of low noise, rad-hard front-end processors for monolithic sensors in a 110 nm process.