Analysis of a Novel High Power-Density Semiconductor-Level Interleaved Converter

This paper introduces a novel interleaved inverter topology for DC-AC conversion in power electronics applications. The proposed topology leverages a semiconductor-level interleaving technique to overcome the limitations of conventional interleaved inverters. Through comprehensive analysis and simulation studies, it is demonstrated that the interleaved inverter achieves higher power density and improved ripple frequency as compared to conventional counterparts. One of the main advantages of the proposed technology over conventional interleaving converters is the use of a single inductor, which enables its use not only in grid-tied applications but also in electric drives.