Analysis of the photoluminescence degradation of porous silicon layers

In this paper, we present methods for the preparation of phosphorylated porous silicon structures that do not degrade in air over time. The best results that meet the purpose of this work were obtained on a PS sample prepared in an electrochemical solution with the addition of HCl. The addition of HCl to the standard electrolyte promotes the formation of stoichiometric SiO2 oxide on the PSi surface. The addition of FeCl3 to the electrolyte leads to the formation of a stable iron compound on the PSi surface, which stabilizes its photoluminescent properties. Low-temperature annealing of the sample also leads to stabilization of the PSi’s PL properties, but the main disadvantage of this method is the formation of nonelemental silica SiOx on the PS surface, which leads to the quenching of the PL of PSi.