Monolithic Integration of Light Emitting Diode, Waveguide Modulator, and Photodiode on a GaN-on- Si LED Epitaxial Wafer

Monolithic integration of light-emitting diode (LED), waveguide modulator and photodetector (PD) were realized based on a AlGaN/InGaN multiple quantum well (MQW) LED epitaxial wafer. Those components share the same quantum well structure and are fabricated without additional epitaxial material growth and ion implantation, offering a cost-effective method. Experimental results show that when the volage of the modulator is fixed, the modulation photocurrent received by the PD has a linear relationship with the injection current of the LED. This on-chip integrated devices pave a way for gallium nitride optoelectronic applications.