Research Progress on Performance Optimization of Ga2O3 SBD

Gallium oxide (Ga2O3) is a booming ultrawide bandgap semiconductor material to fabricate power devices which has a wider band gap, ultra-high critical breakdown field strength, and higher Baliga's Figure of Merit (BFOM) than GaN and SiC. Nowadays, better Ga2O3 SBDs are developing towards higher breakdown voltage and lower specific on-resistance. Due to the Baliga curve, the specific on-resistance and breakdown voltage of the device is always a trade-off, so various explorations of optimization of Ga2O3 SBD have been employed. In this article, the latest progress of the G
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SBD is consolidated from the fabrication process and architecture improvement. It will begin with a summary of properties of Ga2O3 and the advantages and existing problems of Ga2O3 SBD. The researchers have solved the problems of epitaxial layer quality and electric field distribution by utilizing multiple advanced fabrication processes, such as epitaxial process, reactive ion etching, heat treatment, etc., and thus improved the performance of Ga2O3 SBD. Different state-of- the-art architectures such as field plate (FP), trench structure, p-NiO/n-Ga2O3 heterojunction, etc. are introduced in detail to illustrate the optimization of the device. It is expected to help researchers summarize recent advances in the performance optimization of Ga2O3 SBD.