Growth of 150 mm 4H-SiC Epilayers with Low Surface Roughness by a Hot-Wall Reactor on 4° off- Axis Substrates

Homoepitaxial growth has been performed on 4° off-axis 150 mm diameter 4H-SiC (0001) Si-face substrate by using our home-made hot wall LPCVD reactor. According to the result, we have obtained 4H-SiC epitaxial layers with excellent uniformity for thickness and doping, as well as in surface roughness in standard epitaxy on 150 mm wafers. After the improvement, the 10 to 11 μm thick epilayer with the thickness and doping uniformities (δ/mean) of <1.0% and <5%, respectively, could be routinely achieved. Surface roughness of the as-grown 150 mm 4H-SiC epitaxial layer has an RMS value of 0.13 nm scanned by AFM on 10×10 μm
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areas. The results of 150 mm 4H-SiC epitaxial growths demonstrate that this home-made hot wall reactor offers the opportunity for mass production of large diameter 4H-SiC epitaxial wafers with high quality.