Research on Stability of H-Terminated Diamond MESFET

In this paper, metal–semiconductor field effect transistor devices based on hydrogen-terminated diamond were fabricated, and the output stability of the devices under cyclic testing and low-temperature conditions was investigated. Under cyclic testing, the maximum output current of the device decreased by approximately 4.3%, and the maximum shift in the transfer curve was 0.12V. At low temperatures, the device also exhibited relatively good stability, with a maximum shift in the transfer curve of 0.2V.