An iTFET with Control Gate for Low Power Applications in RF and Digital Circuits

In this study, we introduce a device configuration for the simulated high Schottky barrier inductive line tunneling TFET (iTFET) equipped with an advanced control gate. The unique aspect of this design architecture lies in its elimination of ion implantation, resulting in a significant reduction in both the thermal budget and process-related complexities. Additionally, the strategically positioned control gate between the source and drain regions bolsters the device's overall performance and reliability. This modification primarily serves to enhance the ON-state current (I
ON
), while concurrently diminishing the OFF-state current (I
OFF
) via precise electric field control. Simulation outcomes reveal a compelling device performance, showcasing an average subthreshold swing (SS
AVG
) of 31.5 mV/dec, an I
ON
value of 4.96×10
⁶
A/μm, and an impressive I
ON
/I
OFF
ratio of 1.1×10
⁸
at V
DS
= 0.2V. Such advancements promise a marked increase in the cut-off frequency and a broadened gain bandwidth, setting a new precedent for superior analog RF performance. The innovative control gate structure, when integrated into analog designs, offers potential improvements in both cut-off frequency and gain bandwidth. Moreover, in the realm of digital applications, our design demonstrates the capability to operate effectively at low V
DD
, while maintaining a commendable intrinsic gain.