Complementary Field-Effect Transistors: From Silicon to 2D Materials

This study presents a comprehensive review of the evolution of monolithic Complementary Field-Effect transistors (CFET) from laboratory prototypes to pre- production readiness. The paper analyzes the challenges encountered in the fabrication process, including insulator formation between active layers, deep ion implantation for bottom devices, selective contact between top and bottom transistors, and the layout of stacked transistors. Furthermore, the research investigates the potential implementation of the CFET structure using 2D materials following the nano-sheet architecture. An evaluation on the compatibility of 2D transistors with the monolithic CFET will also be provided.