Evaluating Sense Amplifier Performance in SRAM Circuits

Examining sense amplifiers is vital to enhance circuit efficiency, optimize reads, minimize power usage, and elevate system functionality through precise signal detection and faster data retrieval. This paper analyses and compares the performance of existing sense amplifiers based on read power, read delay, and energy consumption per switching activity. To observe the influence of diverse operating conditions, the analysis is also performed at different temperatures, supply voltages, and all corners of the fabrication process. The results demonstrate that the current latch sense amplifier performs the fastest read operation even in the presence of PVT -variations, while consuming moderate read power, and energy compared to other designs. In contrast, the differential current-mirror sense amplifier consumes the highest power and energy while exhibiting the slowest read operation. The results also indicate that the sense amplifiers execute the fastest read operation at high supply voltage, SF corner, and low temperature. The read power and energy consumptions are at their minimum levels when operating under low supply voltage, SS corner conditions, and high temperature. Conversely, the designs reach their highest values at high supply voltage, FF corner conditions, and low temperature.