Electrode Dependent Resistive Switching Properties of CoAu Core-Shell Incorporated Chitosan

A ‘Green ReRAM for ‘Green Computing’, based on the resistive switching capabilities of chitosan incorporated with cobalt-gold (CoAu) core-shell quantum dots is fabricated and investigated. Thin films with a
$10 wt$
. % CoAu to chitosan ratio were employed as active layers in devices with bottom electrodes made of aluminium (Al), indium doped tin oxide coated Polyethylene Terephthalate (PET), and tungsten (W). All of the reported devices had a silver (Ag) top electrode. A comparison of the effect of the bottom electrode indicated that the ITO-based device had significant hysteresis, with
$I_{ON}/I_{OFF}\geq 10^{2}$
occurring primarily in the negative voltage. The Al-based device had the least hysteresis and the lowest conductance of the three devices. The W-based device, on the other hand, demonstrated evident but mild hysteresis accompanied by significant data noise.