Innovations in GaN Four Quadrant Switch technology

A Four Quadrant Switch (FQS) provides bidirectional current carrying and bidirectional voltage blocking capability. Integrated FQS can enable significant size, complexity, and cost savings compared to traditional implementations that use multiple components resulting in limited performance and high cost. We demonstrate GaN based integrated FQS technology. The lateral GaN HEMT technology combined with a common drain configuration allows us to share the high-voltage region and results in a 40% reduction in the die size compared to two discrete GaN switches. The integrated FQS is a 60mOhm switch assembled in a TO247 package with a floating tab. We show excellent bidirectional current conduction and voltage blocking with symmetric current-voltage and capacitance-voltage behavior. The $R_{ON}$. $Q_{g}$ is 80% lower and $R_{ON}$. $Q_{rr}$ is 30% lower than state$- of- art SiC MOSF$ETs resulting in 60% lower switching losses.