A Wideband GaN MMIC Power Amplifier Based on Non-Uniform Distributed Topology

In this paper, a wideband monolithic microwave integrated circuit (MMIC) power amplifier (PA) designed in 250 nm gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) process is presented. The PA uses a non-uniformly distributed topology consisting of 7-stage transistors and artificial transmission lines (ATL). By adjusting impedance of transistors and ATLs can attain higher output power and higher power-added efficiency (PAE). At the same time, for purpose of enhancing the circuit stability and cut-off frequency, we have configured a parallel capacitor and resistor (RC) structure at the gate of each transistor. The simulated results of the non-distributed power amplifier (NDPA) show that within 2–18 GHz frequency band, a small signal gain of 9.8-12dB, a PAE of 16%-36%, an output power (Pout) of 34.8-37dBm.