Molecular beam epitaxial growth and characterization of InP/GaAsSb/InP double heterojunction bipolar transistors

The type II band lineup of InP and GaAsSb facilitates the unhindered transport of electrons from the base to the collector of a InP/GaAsSb/InP double heterojunction bipolar transistor (DHBT). This favorable band alignment of the base and the collector regions is highly desirable for the high-speed operation of DHBTs. Bolognesi et al. have recently demonstrated f/sub t/ and f/sub max/ values as high as 300 GHz in InP/GaAsSb/InP DHBTs that were grown by metalorganic chemical vapor deposition (MOCVD). At HRL we have employed molecular beam epitaxy (MBE) to study the growth and doping of GaAs/sub 1-x/Sb/sub x/ alloys, and for the growth of InP/GaAsSb/InP n-p-n DHBTs.