Design of Dual Gate Carbon Nanotube FET and Analysis the Short Channel Effects

In today's world, wireless technology and portable electronics are everywhere. According to a World Health Organization (WHO) assessment, the harmful radiations emitted by portable electronic devices are the root cause of conditions like brain tumors, infertility, hearing loss, eyesight issues, and foetal illnesses. As a result, we needed electronic and wireless devices that only dissipated extremely low power. Complementary MOSFETs (CMOS) are the primary component used in the production of integrated circuits. Short Channel effects (SCEs) result from the aggressive scaling of traditional CMOS, where the channel length is below 10 nm and the gate oxide thickness is below 3 nm. Scaling down of silicon integrated circuits (IOFF) causes complications such as the tunneling effect, gate oxide thickness effect, threshold voltage roll-off, subthreshold swing (SS), drain induced barrier lowering (DIBL), and subthreshold leakage current. This problem has given rise to a chance for the development of innovative materials. Carbon nanotubes are a promising material for the upcoming MOS technology era. In this article, a modeling of a DG-CNTFET (Double-Gate Carbon Nanotube Field-Effect Transistor) with ohmic and Schottky Barrier (SB) was described. The SB-DG-CNTFET demonstrated 75% greater drain current at the same nanoscale parameters as the DG-CNTFET, including 14 nm channel length, 1 nm oxide thickness, 0.2V threshold voltage, and 300K temperature. At V
DS
= 0.1V, the SB-DG-CNTFET has an I
on
/I
off
ratio of 800×10
³
, whereas the DG-CNTFET has a ratio of 314×10
³
. This is 154 times bigger than the value of DG-CNTFET. At 300
^o
C temperature when compared to a MOSFET, the subthreshold swing of a CNTFET is 55mV/Dec, the DIBL is 38.5, and the I
on
/I off ratio is ten times larger. SB-DG CNTFET has a substantially higher I
on
/I off ratio than CNTFET (133x) and DG-MOSFET (250x). Finally, the simulation findings show that the CNTFET outperforms the MOSFET in the Nanoscale regime for high-speed and low-power electronic switching applications.