Enhancing Photovoltaic Efficiency in CsSnI3-Based Perovskite Solar Cells through Optimal Defect Density

The utilization of lead-based perovskite solar cells (PSCs) in commercial applications is significantly limited due to concerns over their toxicity and stability. Perovskite-based photovoltaic (PV) cells are right now at the forefront of thin-film PV research and development due to their high-power conversion efficiency (PCE) and ease of manufacture. Perovskite materials based on Pb or Sn elements have been employed in the fabrication of solar cells. In instances of this nature, the utilization of tin-based inorganic PSCs can play a crucial role in advancing the performance of PSCs to exceptional levels. In this context, we want to present a theoretical exploration of a PV device known as a CsSnl
3
-based PSC, which possesses the desirable attributes of being lead-free, environmentally sustainable, and dependable. The present study involves the utilization of SCAPS software to conduct device modelling of PV cells based on CsSnl
3
. The bulk defect density of the buffer layer, specifically CsSnl
3
, has been altered from 10
¹⁵
to 10
¹⁸
cm
^-3
. Based on the comprehensive findings, it can be shown that the PV CsSnl
3
metrics exhibit maximum values when the defect density of CsSnl3-based PSC is reduced. When the concentration of faults reaches its minimum level of 10
¹²
cm
^-3
, the PV values exhibit enhancement as seen below: The observed results consist of a PCE of 23.3%, a V
OC
of 0.87V, a J
SC
of 30.76 mA/cm
²
, and an FF of 86.69%. These findings underscore the significance of mitigating the bulk defect density in CsSnl
3
-based PSCs in order to attain enhanced efficiency. Through additional investigation and advancement, it is plausible that PSCs devoid of lead, which rely on CsSnl
3
as the active layer, could present a more environmentally friendly and enduring substitute for conventional lead-based PSCs.