High-Power $1.5 \mu \mathrm{m}$ InGaAsP/InP BH Laser Having Dilute Waveguide Structure

A
$\boldsymbol{1.5\mu \mathrm{m}}$
high power buried heterojunction (BH) semiconductor laser having dilute waveguide structure has been fabricated. At room temperature, the peak output power is 132 mW. The vertical and lateral divergence angles are
$\boldsymbol{16.8\times 32.4}$
degree.