A Novel Tempreature-Included CSWPL Model for GaN HEMTs

This paper presents a novel temperature-included canonical section-wise piecewise linear (CSWPL) behavioral model. The basic theory of the CSWPL model and the proposed modeling method are described in detail. A 10 W gallium nitride (GaN) high-electron-mobility transistor (HEMT) provided by Wolfspeed is used for comprehensive simulation tests. A comparison is made between the proposed model and the classical temperature-dependent CSWPL model. As a result of the developed model, accurate predictions can be made over a wide range of ambient temperatures (-20°C to 130°C) and input powers. Additionally, load-pull simulation results are presented, which demonstrate that the proposed model is able to accurately predict the output power contour as well as the power-added efficiency contour.