High-Side PMOS Driving Half-Bridge Driver with a Higher Turn-Off Rate

The traditional High-Side PMOS driving bridge driver exhibits a fast turn-on and slow turn-off phenomenon when driving the external high-side PMOS, which eventually causes the output pulse to broaden. This phenomenon occurs because of the characteristics of the PMOS, turning off slower than turning on. To solve the above problem, a new method is proposed to enhance the voltage difference of the PMOS by raising the turn-off voltage, which is far beyond the turn-off threshold of the PMOS, so the PMOS can be turn-off quickly. A High-Side PMOS driving half-bridge driver IC is designed and fabricated by using a
$\mathbf{0.18}\ \mu\ \mathbf{m}$
BCD chip process flow. The application of the IC as a test board is also fabricated. The verification results show that the pulse width of the signal varies by only 5.5 ns.