Impact of Proton Irradiation at Different Temperatures on 100 V VDMOSFETs

The impact of proton irradiation on 100 V N-channel VDMOSFETs at room temperature (RT) and low temperature (LT) (77K) was systematically investigated in this work. From our analysis, the degradation of the device’s electrical properties after proton irradiation was demonstrated. Particularly, at RT, the electrical properties recovered at the fluence of $1\times 10^{16}$p/c$\mathrm{m}^{2}$, which was attributed to the depositing energy of the incident protons inside the devices during irradiation, which caused continuous temperature rise, resulting thus in the annealing effect and facilitating the recovery of the device’s electrical performance. By comparing the acquired results during proton irradiation of the devices at RT and LT, it was revealed that the LT irradiation significantly affected the electrical properties of the devices. This effect indicates that LT promotes the irradiation-induced damage of the devices. For this reason, the impact of the temperature on irradiation damage should be considered in the radiation-hardened design.