DC and RF Small Signal Modeling of 28nm Planar MOSFET

In this paper, DC model and RF small signal model of 28nm planar MOSFET are proposed respectively. First, using the industry standard model, the Berkeley Short-Channel IGFET Model (BSIM), a DC global model of the MOSFET is established. An RF small-signal model up to 100 GHz is also obtained accurately. A nonlinear rational function is fitted to obtain the parameters. Due to the physical limitations of the mathematical model, the RF small-signal model is fitted with the RF quality factor. The analysis of the parasitic parameter variations at different voltages is performed. Good agreement is obtained between the equivalent circuit-modeled and TCAD-simulated data, which verifies the reliability of the model.