A 0.4-2 GHz Wideband LNA Exploiting Noise Reduction and High Gain

In this paper, a wideband low-noise amplifier (LNA) with noise reduction and high gain technology is proposed. The series peaking approach is used in this wideband LNA design to enhance the high frequency gain response, and a two-stage amplifier further widens the bandwidth (BW). The technology further makes use of current reuse and boosts transconductance of the CS transistor while maintaining low power consumption. Simulated in $0.25 \mu \mathrm{m}$ InGaAs pHEMT process, the proposed LNA is capable of driving an external 50$\Omega$ load and achieves noise figure (NF) of 0.92-0.96 dB and input return loss (S
11
) better than -12 dB over the whole bandwidth. The LNA achieves high gain (S
21
) of 30 dB and 1 dB com-pression point (OP1dB) of 16 dBm, respectively.