Fabrication Process Optimization of A High- Power Double-Sided Cooled SiC Power Module

Fabrication and realization of complex double-sided cooled (DSC) module packaging structures is one of the main challenges limiting their widespread application in emerging high-power silicon carbide (SiC) power modules. In this paper, the encapsulation-process development of a designed high-performance DSC 1.7-kV half-bridge SiC power module is presented. It is essentially an iterative optimization process of the fabrication flow and involves the construction of multiple prototype modules. Benefiting from this process, the fabrication strategy to ensure a repeatable high-insulation DSC module architecture is developed. Following the recommended fabrication procedure, a 1.7-kV/ 350-A full SiC MOSFET half-bridge prototype module was assembled. Both static and dynamic performance validations of the assembled module are performed to demonstrate the effectiveness of the optimized fabrication process.