1.3 micron VCSEL arrays for telecom applications

In this work, we have reported the first arrays of GaAs-based 1.3 micron VCSELs and described their operation under both DC and modulated conditions. Excellent uniformity of key operating parameters was observed. In addition, we have demonstrated excellent performance over temperature as well as transmission over extended distances of single mode fiber. Further, we have presented the initial reliability data for these devices under accelerated stress conditions. Together, these results suggest that GaAs based 1.3 micron VCSELs will be suitable for at least OC-48 IR communication applications with array architectures that offer 3 to 4 times increased density over small form factor devices, as well as lowered cost and outstanding performance.