Current-fed Active Voltage Source Gate Driver for SiC MOSFETs

Increasing demand for power electronic converters in daily life has stimulated researchers to work on various related aspects. Among all, the gate driver is the most crucial part, which is utilized to drive the semiconductor switches. Currently, the available gate drivers are based on voltage-driven technology, which has reached its limits. Moreover, to fasten the switching operation of these switches, the current source gate drivers (CSDs) were proposed. However, CSD results in challenges such as high overshoots, oscillation, and EMI. In this article, a current-fed active voltage source gate driver (CFAGD) is proposed, which allows the faster switching of the semiconductor switch with a reduction in overshoots and oscillation in switch voltage and current. The proposed gate driver's orientation and operation are discussed with the simulation results for driving the SiC MOSFET.