Defect Spectroscopy of MBE-grown GaAs0.51Sb0.49 pin Infrared Detectors on InP Substrates

Using deep level transient spectroscopy, a baseline defect spectrum for MBE-grown GaAs
0.51
Sb
0.49
on InP was established at optimized and non-optimized growth temperatures. The samples show two dominant traps, with the non-optimized sample having a trap concentration 100-fold greater than the optimized.