a-Si:H Layer Enabling a sub-1.2 dB Loss SiN-III/V-SiN Transition for Evanescently Coupled Lasers at 920 nm

Overcoming the high index contrast between SiN and III-V amplifiers is essential for the realization of heterogeneously integrated evanescently coupled lasers. Here, we propose a design based on a-Si:H as the transition layer, demonstrating sub-1.2 dB loss for the whole SiN-III/V-SiN transition at 920 nm.