Optimal Switching Oscillation Damper of SiC-MOSFET

Wide bandgap (WBG) semiconductor devices namely SiC-MOSFET enable high-frequency power converters, which have benefits over many other switching devices in terms of power density and dynamic performance. However, switching oscillation is a common problem for this class of devices, and it has a lot of unfavorable effects. This work examines the underlying causes of the switching oscillation, its effects on the system, and modeling analysis to derive control mechanisms to prevent undesirable outcomes. This work discusses the underlying causes of the switching oscillation, which are: (1) di/dt or/and dv/dt-induced damped oscillation in the presence of parasitic factors; (2) undamped oscillation brought on by the switch’s negative resistance; (3) effect of the negative capacitance phenomena brought on by the semiconductor devices’ physical orientation. An effective control approach is proposed in this research work to inhibit the switching oscillation of SiCMOSFET. The proposed integrator-based damper takes into account the turn on switching oscillation. The performance of the proposed damper is compared with the integral and proportional-integral-derivative (PID) controller for justifying its effectiveness.