Development of Raman Spectroscopy for Defect Analysis in SiC Devices

Recently, SiC has gained increasing popularity in high voltage power devices, since it can handle much higher breakdown voltages compared to traditional silicon-based devices. However, the defect density in SiC wafers remains high. In this report we explore the role Raman spectroscopy can play to identify different types of defects in SiC wafers and devices. We focus on two prominent bands: The peak 776 cm
^-1
is related to local residual stress and can be used to identify basal plane dislocations (BPD). The peak at 970 cm
^-1
is sensitive to the doping concentration and can be used to judge electrical uniformity of the SiC wafer without contact.