Interelectronic Scattering in a Model Taking into Account the Parasitic Resistance of a Heterostructure Resonant Tunnel Diode

The contribution of electron-electron interaction to the parasitic resistance of RTDs is considered. Within the framework of the constructed compact model of the current-voltage characteristics of the RTD, the electronic interaction is taken into account by means of additional resistance. Good agreement with experimental results was obtained (Δ<1.6%). The results of the work will improve the efficiency of RTD design methods and assess the reliability of devices based on them.