A Process Tuning Analysis for the Three-Independent-Gate Field-Effect Transistor

Three-Independent-Gate Field-Effect Transistors (TIGFETs) are demonstrated Schottky-barrier-based ambipolar devices, meaning they can be reconfigured to be either n- or p-type post-processing. A novel solution to traditional scaling, successfully fabricated and electrically tested high ON-current siliconnanowire TIGFET devices are exhibited in this paper for the first time. Previously, these devices were fabricated as FinFETs or from grown nanowires, whereas our our top-down process has the benefit of process-based repeatability which allows for ease of circuit design and testing. We varied the gate dielectric and metal stack during fabrication and noticed improvements when using a high-k metal stack previously unused in these devices. We performed Synopsys Sentaurus simulations of the same geometries to determine future processing enhancements. Here, we present a comparison of our fabricated silicon-nanowire TIGFET results and these simulations.