Van der Waals Integrated Silicon Broadband Imagers

Van der Waals (vdWs) heterostructures with their extended cross-dimensional integration freedom, emerged as most appropriate choice for next-generation electronics and optoelectronics. In the post Moore era, the electronics industry is on the verge of shifting from covalent or ionic bond-dominated homo- and hetero-interfaces to vdWs integrated systems, hailed by clean interfaces free of dangling bonds and Fermi-level pinning while lodging rich device physics from confinement and gating effects. Hence, it is essential to develop devices exploiting cross-dimensional benefits, bringing the best of materials in different dimensions. One such strategy is to integrate two-dimensional (2D) materials with bulk semiconductors in the most widely used large-scale device schemes like charge-coupled devices (CCD) and complementary-metal-oxide-semiconductor (CMOS) using a flip-chip method. Taking this into consideration, we demonstrate 2D-silicon hybrid imagers with the benefits of both CCD and CMOS, showing potential for broadband, ultrafast photoresponse, viable for the period of Internet of Things (IoTs), artificial intelligence (AI), and compute-in-memory.