Dielectric Confined Nickel-Titanium Germano-Silicide Junctions to SiGe Nanochannels

The silicidation process, used for the fabrication of contacts in MOSFETs, has met some challenges, when transferred to SiGe channel material. In this paper, the formation of germano-silicides in SiGe nano-channels is investigated. A wide range of temperatures were tested and both pure Ni and Ni
90
Ti
10
alloy were used as the diffusive metal. A repeatable process flow was established, with which a long intruded germano-silicide of around 350 nm with little to no imperfections can be achieved. A nanochannel with (NiTi)(SiGe)/SiGe junctions was gated to form an ambipo-lar transistor with clear n- and p-branches in its transfer characteristics.