A Promising Alternative to Conventional EBL: UV Lithography with Direct Laser Writing for Josephson Junction Patterning

This paper presents a new approach for patterning Josephson junctions using a UV lithography process with direct laser writing and image reversal resist. The fabricated junctions with A1/AlOx/A1 on Si substrates achieved a resolution close to 0.8 $\mu$m and an aspect ratio near to 1: 1, which is crucial for optimal performance as a switch in quantum bits. Compared to conventional Electron Beam Lithography (EBL), this method offers cost-effectiveness and high reproducibility. The junctions’ quality was characterized using normal state resistance measurements with a 4-terminal probe and current sweeps. Our results demonstrate the potential of this new technique for achieving high-quality Josephson junctions for use in advanced applications such as quantum computing and superconductivity research.