A Wide-Band GaN Power Amplifier with Negative Feedback

A two-stage common source wideband power amplifier with negative feedback network is presented in this paper. The design uses a negative feedback structure to improve the bandwidth and stability, and the matching network is also designed elaborately to meet the broadband requirements. The theoretical analysis of broadband design based on the parasitic effect of transistors is introduced and carried out in details in the paper. The bandwidth expanding technique with negative feedback structure are also analyzed. The dedicated theory analysis method is different from the impedance matrix theoretical wideband analysis in other designs. The proposed power amplifier designed based on a 0.25µm GaN process, has a saturated output power greater than 26dBm in the 8GHz-18GHz wide operating band, a maximum dynamic current of less than 149mA, and has a compact size of 1.7mm×1.1mm.