A Steep Slope Sub-10nm Armchair Phosphorene Nanoribbon FET with Intrinsic Cold Contact

The thermionic limit of conventional MOSFET hinders steep slope switching, requiring at least 60 mV gate voltage to modulate the current at room temperature. In this work, we adopted a multiscale simulation approach to investigate sub 10 nm gate length cold source field effect transistors (CS FET) based on edge-oxidized armchair phosphorene nanoribbons (APNR-O). We showed that the presence of narrow DOS in APNR-O could filter out the high energy electrons, thus bringing the subthreshold swing (SS) down to a minimum value of 40 mV/decade and an average value of 58 mV/decade for a four-decade increase in drain current (I
DS
). An on current (I
ON
) of 1418.5 µA/µm and I
ON
/I
Off
ratio of 2.1 × 10
⁶
was achieved by the proposed device. Low switching energy (PDP) and fast switching speed (τ) of ∼0.15 fJ/µm and ∼0.35 ps, respectively, were predicted in this work. These results indicate that the APNR-O-based FET can simultaneously fulfill the requirements of the International Roadmap for Devices and Systems (IRDS) both for high-performance (HP) and low-power (LP) devices in 2028. Hence, the APNR-O can be a good channel material for more than Moore devices.