Tunneling Leakage Current Dependent RDD Model Framework for Gate Oxide TDDB

The Reaction Diffusion Drift (RDD) model is used to simulate trap generation (ΔN
TG
) kinetics during Time Dependent Dielectric Breakdown (TDDB) experiments. Several features of measured data, e.g., stress gate voltage (V
G
) dependence of mean time to breakdown (T
BD
) across temperature (T) and gate oxide thickness (Tox), Weibull slope (β) across Tox are explained. The role of electron (J
E
) and/ or hole (J
H
) leakage current (with J
H
from Anode Hole Injection or AHI) is explored as a trigger for RDD model. The polarity gap between positive and negative V
G
stress is addressed.