Doped Channel SOI pMOS TCAD Description Including Floating Body Effects

In this work, we propose to investigate Silicon-on-Insulator (SOI) pMOS behavior modulation due to channel doping and its TCAD description. We first demonstrate channel doping variation due to the diffusion through the BOX and consumption during gate oxide formation. As the channel thickness is not so thin (T
SI
=22nm), channel doping variation leads to different device operation from Fully Depleted (FD) to Partially Depleted (PD), going through an "in between" regime where Floating Body (FB) effects occurs. We finally propose TCAD methodology to account for channel doping variation in SOI pMOS.