Self-Heating Influence on Hot Carrier Degradation Reliability of GAA FET by 3D KMC Method

The self-heating coupling of the hot carrier degradation effect is studied in detail. The results show that self-heating has a strong activation impact on hot carrier degradation. By simulating the influence of various temperature driving forces on reliability assessment, the necessity of using temperature gradient driving forces in the evaluation and prediction process is demonstrated. The temperature gradient inside the channel causes the trapped defects to concentrate toward the drain side. The threshold voltage degradation of each channel is separated from the multi-stack GAA device, which indicates that the reliability degradation of the intermediate channel is evidently different from the overall threshold voltage drift due to severe thermal effects.