Fully Integrated Vector Modulator in 130-nm SiGe BiCMOS Technology for 5G Front-End Modules

This paper presents the simulation results of a vector modulator that can be used in TX/RX front-end modules of the fifth generation communication systems. The vector modulator is designed in 130-nm SiGe technology and demonstrates RMS amplitude error below 0.2 dB and RMS phase error less than 1.2 degree in 24–30 GHz frequency band while provides about 5 dBm input 1-dB compression point with 0 dB maximum gain and 30 mW power consumption. The layout area of the designed fully integrated circuit is less than 0.5 sq. mm.