Defect Formation on the Surface of Silicon Substrates after Various Technological Operations

The article describes the defect formation on the surface of silicon substrates during various technological operations in the manufacture of electronics elements. It is established that when the substrates are separated into elements/crystals by cutting with a diamond disk, dislocation grids are formed along the cutting line. It is also shown that the use of liquid-phase diffusion of phosphorus contributes to more intense defect formation than diffusion from flat sources. It has been shown that silicon with crystallographic orientation [100] is more prone to defect formation during technological operations than silicon with orientation [111]. It has also been found that defects in the form of craters can form on the surface of plates during thermal gold sputtering as a result of local melting of silicon when gold droplets hit substrates with a temperature higher than the melting point of silicon. Some migration of dislocations to the periphery of the crystal in the presence of inversion layers after isothermal annealing was found.