SRAM Cell Leakage Reduction Methodologies for Low Leakage Cache Memories

Static memory cells (SRAMs) are a kind that are used in many different electrical systems. It uses less energy, works more rapidly than other memory cells, and doesn't need to be replaced often. SRAM is thus the most often used memory cell among VLSI designers. Octa-core processors, which have been used in electronics for around 5 to 6 years, are utilised in mobile appliances, thus as size decreases, transistor density and capacity increase. We are thereby creating memory that is space-efficient. SRAM cells can retain information as long as power is provided without needing to be constantly restored. The acquisition of SRAM was made possible by its significant lead (DRAM). In this research paper, we have simulated various leakage reduction Techniques to compare the leakage power of SRAM cell, also various parameters like rise time, fall time, delay, SNM, dynamic power consumption, static power consumption and slew rate are calculated.